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| Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 DESCRIPTION The NE/SA5222 is a low-power, wide-band, low noise transimpedance amplifier with differential outputs, optimized for signal recovery in FDDI fiber optic receivers. The part is also suited for many other RF and fiber optic applications as a general purpose gain block. PIN DESCRIPTION D Package VCC1 GND1 1 2 3 4 8 7 6 5 VCC2 OUT OUT GND2 FEATURES * Extremely low noise: 2.0pA Hz * Single 5V supply * Low supply current: 9mA * Large bandwidth: 165MHz * Differential outputs * Low output offset * Low input/output impedances * High power-supply-rejection ratio: 55dB * Tight transresistance control * High input overload: 115A * ESD protected IN GND1 SD00360 Figure 1. Pin Configuration APPLICATIONS * FDDI preamp * Current-to-voltage converters * Wide-band gain block * Medical and scientific instrumentation * Sensor preamplifiers * Single-ended to differential conversion * Low noise RF amplifiers * RF signal processing TEMPERATURE RANGE -40 to +85C ORDER CODE SA5222D DWG # SOT96-1 ORDERING INFORMATION DESCRIPTION 8-Pin Plastic Small Outline (SO) package ABSOLUTE MAXIMUM RATINGS SYMBOL VCC1,2 TA TJ TSTG PD IINMAX Power supply voltage Ambient temperature range Junction temperature range Storage temperature range Power dissipation TA = 25oC (still air)1 Maximum input current PARAMETER RATING 6 -40 to +85 -55 to +150 -65 to +150 0.78 5 UNITS V C C C W mA NOTE: 1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance JA = 158oC/W. Derate 6.2mW/C above 25C. RECOMMENDED OPERATING CONDITIONS SYMBOL VCC1,2 TA TJ Power supply voltage Ambient temperature range: SA grade Junction temperature range: SA grade PARAMETER RATING 4.5 to 5.5 -40 to +85 -40 to +105 UNITS V C C 1995 Apr 26 1 853-1582 15170 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 DC ELECTRICAL CHARACTERISTICS Typical data and Min and Max limits apply at TA = 25C, and VCC1 = VCC2 = +5V, unless otherwise specified. SYMBOL VIN VO VOS ICC IOMAX IIN IINMAX VOMAX PARAMETER Input bias voltage Output bias voltage Output offset voltage Supply current Output sink/source current Input current (2% linearity) Maximum input current overload threshold Maximum differential output voltage swing Test circuit 5, Procedure 2 Test circuit 5, Procedure 4 RL = , Test Circuit 5, Procedure 3 6 1.5 60 80 TEST CONDITIONS SA5222 Min 1.3 2.9 Typ 1.55 3.2 0 9 2 90 115 3.6 Max 1.8 3.5 100 12 UNIT V V mV mA mA A A VP-P AC ELECTRICAL CHARACTERISTICS Typical data and Min and Max limits apply at TA = 25C and VCC1 = VCC2 =+5V, unless otherwise specified. SYMBOL RT RO RT RO f3dB RIN CIN R/V R/T IIN PARAMETER Transresistance (differential output) Output resistance (differential output) Transresistance (single-ended output) Output resistance (single-ended output) Bandwidth (-3dB)1 Input resistance Input capacitance2 VCC1 = VCC2 = 5 0.5V TA = TA MAX - TA MIN Test Circuit 2, f = 10MHz Test circuit 2, f = 50MHz f = 100MHz f = 150MHz CS = 1pF f = 50MHz f = 100MHz f = 150MHz PSRR PSRR IINMAX tr, tf tD Power supply rejection ratio Power supply rejection ratio3 Maximum input amplitude for output duty cycle of 50 5%4 Rise and fall times Group delay DC Tested, VCC = 0.5V f = 1.0MHz, Test Circuit 3 Test circuit 4 10 - 90% f = 10MHz Transresistance power supply sensitivity Transresistance ambient temperature sensitivity RMS noise current spectral density (referred to input) Integrated RMS noise current over the bandwidth (referred to input) CS = 0pF IT TEST CONDITIONS DC tested, RL = , Test Circuit 5, Procedure 1 DC tested DC tested, RL = DC tested Test Circuit 1 SA5222 Min 13.3 30 6.65 15 110 Typ 16.6 60 8.3 30 140 150 1 1.0 0.07 2.0 15 25 36 17 35 55 -55 -34 120 2.2 2.2 dB dB A ns ns nA Max 19.9 90 9.95 45 UNIT k k MHz pF %/V %/oC pA Hz NOTES: 1. Bandwidth is tested into 50 load. Bandwidth into 1k load is approximately 165MHz. 2. Does not include Miller-multiplied capacitance of input device. 3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in VCC line. 4. Monitored in production via linearity and over load tests. 1995 Apr 26 2 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 TEST CIRCUITS SINGLE-ENDED V R T + OUT R+ V IN 1 + S22 1 - S22 2 @ S 21 @ R R DIFFERENTIAL V T + OUT R+ V IN 1 + S22 RO = 2ZO 1 - S22 4 @ S 21 @ R SPECTRUM ANALYZER -40 50 RO = ZO -20 NETWORK ANALYZER S-PARAMETER TEST SET PORT1 ZO = 50 0.1uF R=1k 50 GND1 VCC 20 OUT IN DUT OUT 20 GND2 .1uF CS .1uF GND1 PORT2 ZO = 50 VCC 20 OUT IN DUT OUT 20 GND2 .1F .1F NE5209 10F 50 10F 50 Test Circuit 1: Bandwidth Figure 2. Test Circuit1 SD00361 Test Circuit 2: Noise Figure 3. Test Circuit2 SD00362 TEST CIRCUITS (continued) 5V BIAS TEE NETWORK ANALYZER S-PARAMETER TEST SET PORT1 50 0.1uF .1uF 20 OUT IN DUT 20 .1uF OUT GND2 100 BAL. VCC CAL TRANSFORMER CONVERSION LOSS = 9dB PORT2 NC GND1 NHO300HB 50 UNBAL. Test Circuit 3: PSRR Figure 4. Test Circuit4 SD00363 1995 Apr 26 3 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 TEST CIRCUITS (continued) 5V PULSE GEN OFFSET 0.1uF IN 1k 50 GND1 OUT GND2 DUT 1k .1F B ZO = 50 1k OUT .1F A ZO = 50 OSCILLOSCOPE Meaurement done using differential wave forms Test Circuit 4: Duty Cycle Distortion Figure 5. Test Circuit4 SD00364 TEST CIRCUITS (continued) 5V OUT + + VO (VOLTS) OUT - IIN (A) GND1 GND2 - Typical VO (Differential) vs IIN 2.25 1.80 DIFFERENTIAL OUTPUT VOLTAGE (V) 1.35 VO 0.90 VO1 0.45 0.00 VO2 -0.45 VO4 -0.90 -1.35 -1.80 -2.25 -200 VO8 VO6 VO S VO VO 7 5 3 -160 -120 -80 -40 0 40 80 120 160 200 CURRENT INPUT (A) SA5222 TEST CONDITIONS Procedure 1 RT measured at 30A RT = (VO1 - VO2) / (+30A - (-30A) Where: VO1 Measure at IIN = +30A VO2 Measured at IIN = -30A Procedure 2 Linearity = 1 - ABS((VOA - VOB / (VO3 - VO4)) Where: VO3 Measured at IIN = +60A VO4 Measured at IIN = -60A VOA = RT x (+60A) + VOS VOB = RT x (-60A) + VOS Procedure 4 IINMAX Test Pass Conditions: VO7 - VO5 > 50mV and VO6 - VO8 < 50mV Where: VO5 Measured at IIN = +80A VO6 Measured at IIN = -80A VO7 Measured at IIN = +130A VOB Measured at IIN = -130A Procedure 3 VOMAX = VO7 - VO8 Where: VO7 Measured at IIN = +130A VO8 Measured at IIN = -130A Test Circuit 5: DC Tests Figure 6. Test Circuit5 SD00365 1995 Apr 26 4 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 10 5 OUT SUPPLY CURRENT (mA) 9 25C 85C VOLTAGE (V) -40C 4 3 OUT 2 8 7 1 TA = +25C VCC = 5V 6 4.5 5 SUPPLY VOLTAGE (V) 5.5 0 -200 -100 0 100 INPUT CURRENT (A) 200 SD00548 SD00366 Figure 7. ICC vs. VCC and Temperature 1.8 -40C 1.7 Figure 10. Differential Output Voltages vs. Input Current 2.5 1.5 INPUT VOLTAGE (V) VOLTAGE (V) 1.6 25C 1.5 85C 1.4 0.5 -0.5 -1.5 1.3 4.5V 5.5V TA = +25C 1.2 4.5 5 SUPPLY VOLTAGE (V) 5.5 -2.5 -200 -100 0 INPUT CURRENT (A) 100 200 SD00549 SD00546 Figure 8. Input Voltage vs. VCC and Temperature 3.8 3.6 Figure 11. Differential Output Voltage vs Input Current and VCC 2.5 1.5 3.4 OUTPUT VOLTAGE (V) 85C 25C 3 -40C 2.8 2.6 2.4 2.2 PIN 6 OUTPUT 2 4.5 5 SUPPLY VOLTAGE (V) 5.5 -2.5 -200 -100 -1.5 VOLTAGE (V) 3.2 0.5 85C -40C -0.5 VCC = 5V SD00547 0 100 INPUT CURRENT (A) 200 SD00550 Figure 9. Output Voltage vs. VCC and Temperature Figure 12. Diff. Output Voltage vs. Input Current and Temp. 1995 Apr 26 5 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 18 85C 17 15 PIN 6 TRANSRESISTANCE (KOHMS) 25C 16 -40C 15 S21 (dB) 5 PIN 7 10 14 0 13 Iin = 20A 12 4.5 5 SUPPLY VOLTAGE (V) 5.5 SD00367 -5 1 10 FREQUENCY (MHz) 100 300 VCC = 5V TA = +25C SD00553 Figure 13. Differential Transresistance vs. VCC and Temperature 15 50 Figure 16. Insertion Gain vs. Frequency 5.5V -40C OUTPUT RESISTANCE (OHMS) 40 25C 30 85C S21 (dB) 10 4.5V 5 20 0 PIN 6 OUTPUT 10 -5 1 0 4.5 5 SUPPLY VOLTAGE (V) 5.5 10 FREQUENCY (MHz) 100 300 TA = +25C SD00554 SD00551 Figure 17. Insertion Gain vs. Frequency and VCC 15 Figure 14. Output Resistance vs. VCC and Temperature 50 +85C 45 40 OUTPUT OFFSET (mV) 35 30 25 20 15 10 5 0 4.5 5 SUPPLY VOLTAGE (V) 5.5 SD00552 -5 1 10 100 FREQUENCY (MHz) 300 0 -40C PIN 6 OUTPUT VCC = 5V +85C S21 (dB) 25C 5 85C 10 -40C SD00555 Figure 18. Insertion Gain vs. Frequency and Temperature Figure 15. Output Offset Voltage vs. VCC and Temperature 1995 Apr 26 6 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 200 50 PIN 7 OUTPUT 45 VCC = 5V 100 S21 PHASE (DEG) 40 35 FREQUENCY 30 25 20 15 -100 VCC = 5V TA = +25C -200 1 10 FREQUENCY (MHz) 100 300 SD00368 10 5 0 110 140 BANDWIDTH (MHz) 170 300 PARTS FROM 3 WAFERS 50 Load TA = 25C 0 PIN 6 OUTPUT SD00558 Figure 19. Phase vs. Frequency 8 0.1F COUPLING CAP's 7 6 S21 GROUP DELAY (ns) 5 4 PIN 6 OUTPUT 3 2 1 0 1 10 FREQUENCY (MHz) 100 300 PSRR (dB) Figure 22. -3dB Bandwidth Distribution DIFFERENTIAL OUTPUT 0 -20 VCC = 5V TA = +25C -4 0 VCC = 5V TA = +25C -60 0.1 1 SD00556 10 FREQUENCY (MHz) 100 300 SD00559 Figure 20. Group Delay vs. Frequency 115 Figure 23. Power-Supply Rejection Ratio vs. Frequency 8 OUTPUT NOISE DIVIDED BY 10MHz GAIN 7 95 Z OUT MAGNITUDE (OHMS) 6 75 PIN 6 55 PIN 7 35 INPUT NOISE (pA/ Hz) 5 VCC = 5V TA = +25C CS = 1pF 4 3 2 1 CS = 0pF 15 VCC = 5V TA = +25C -5 1 10 FREQUENCY (MHz) 100 300 0 1 SD00557 10 FREQUENCY (MHz) 100 300 SD00560 Figure 21. Output Impedance vs. Frequency Figure 24. Input Noise Spectral Density vs. Frequency 1995 Apr 26 7 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 VCC1 1 8 VCC2 GND 1 2 7 OUT IN 3 6 OUT GND 1 4 5 GND 2 SD00505 Figure 25. SA5222 Bonding Diagram Die Sales Disclaimer Due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. All die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25C), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack carriers, it is impossible to guarantee 100% functionality through this process. There is no post waffle pack testing performed on individual die. Since Philips Semiconductors has no control of third party procedures in the handling or packaging of die, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. Although Philips Semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. However, for the reasons stated above, Philips Semiconductors cannot guarantee this or any other yield on any die sales. 1995 Apr 26 8 |
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